半导体装置的制造方法

Method for manufacturing semiconductor device

Abstract

Provided is a method of manufacturing a trench MOSFET through use of a simple process having good controllability, which is capable of forming the trench MOSFET on the same substrate as a CMOS transistor and capable of reducing the element area. The method of manufacturing a trench MOSFET includes a formation of a three-dimensional body contact region. Thus, the trench MOSFET can have a structure which can ensure a contact similar to that in a conventional case even in a smaller area.
提供半导体装置的制造方法。提供一种使用简单并且控制性良好的工序的沟槽MOSFET的制造方法,所述沟槽MOSFET能够与CMOS晶体管形成在同一衬底上,可以缩小元件面积。是如下所述的沟槽MOSFET的制造方法:通过形成三维的体接触区域,即便采用更小的面积,也具有能够确保与以往同样的接触的结构。

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