Method for manufacturing groove type MOS transistor

沟槽型mos晶体管制造方法

Abstract

本发明提供一种沟槽型MOS晶体管制造方法。采用了两次形成硼磷硅玻璃的步骤,其中第一次形成硼磷硅玻璃封住了外围区保护环,之后去除有源区通孔中的硼磷硅玻璃,从而使得源漏极离子注入通孔变大,有利于提高注入质量,然后再次形成硼磷硅玻璃,完成了侧墙的形成,并且能够有效地提高外围区保护环的填充效果,进而提高了器件的质量。
The invention provides a method for manufacturing a groove type MOS transistor. The step for forming boron phosphorosilicate glass is adopted twice, wherein firstly the boron phosphorosilicate glass is formed to seal a protection ring in a peripheral region, and then the boron phosphorosilicate glass in a through hole in an active region is removed, therefore, the through hole allowing ions in a source electrode and a drain electrode to be injected is largened, injection quality is beneficially improved, then the boron phosphorosilicate glass is formed again, a side wall is formed, the filling effect of the protection ring of the peripheral region can be effectively improved, and quality of a device is improved.

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    CN-103839833-AJune 04, 2014上海华虹宏力半导体制造有限公司沟槽型mos晶体管的制造方法