Thin film transistor


PURPOSE: To obtain a TFT which is hardly affected by charged contaminants and stable in characteristics. CONSTITUTION: A TFT is provided with an active layer 7 formed on a light transmitting substrate 1, a source electrode 13 and a drain electrode 15 which are opposed to each other through the intermediary of a protective film 9 and formed coming into contact with the active layer 7 through the intermediary of an ohmic contact layer 11, and a gate electrode provided under the active layer 7 through the intermediary of an insulating film 3, where the protective film 9 is a laminated layer composed of an SiNX film 9a, an a-Si film 9b, and an SiNX film 9c. COPYRIGHT: (C)1992,JPO&Japio




Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)


Cited By (2)

    Publication numberPublication dateAssigneeTitle
    CN-102110715-AJune 29, 2011卡西欧计算机株式会社晶体管、显示装置、电子设备和晶体管的制造方法
    US-8653569-B2February 18, 2014Casio Computer Co., Ltd.Transistor, display device, electronic device, manufacturing method of transistor, and manufacturing method of display device