Formation of polycrystalline silicon thin film

Abstract

PURPOSE: To form in a short time a polycrystalline silicon thin film, which has greater crystal grains and is excellent in crystal continuity, without exposing it to high temperature conditions. CONSTITUTION: A polycrystalline silicon thin film 3 is formed by forming amorphous silicon film on a glass substrate 1 and forming a polycrystalline film 2 of calcium fluoride (CaF 2 ) on the resulting amorphous silicon film, and thereafter inserting it in a heating furnace set to 600°C and applying it to one hour crystallization annealing. Calcium fluoride is of a compound likely to be crystal grown and is capable of crystal matching with silicon, so that the amorphous silicon film can be rendered to solid phase growth with the polycrystalline film 2 as a crystal nucleus, and hence crystallization annealing time is shortened by an extend corresponding to the elimination of the need of producing crystal nuclei in the amorphous silicon film. COPYRIGHT: (C)1992,JPO&Japio

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)

    Title

Cited By (2)

    Publication numberPublication dateAssigneeTitle
    US-5753541-AMay 19, 1998Nec CorporationMethod of fabricating polycrystalline silicon-germanium thin film transistor
    WO-2011149215-A3April 19, 2012노코드(주)다결정 실리콘 박막의 제조방법